tm FFP08S60SN 8 a, 600 v, stealth? ii diode ?2008 fairchild semiconductor corporation FFP08S60SN rev. a www.fairchildsemi.com 1 FFP08S60SN features ? stealth recovery t rr = 25 ns (@ i f = 8 a) ? max forward voltage, v f = 3.4 v (@ t c = 25c) ? 600v reverse voltage and high reliability applications ? general purpose ? switching mode power supply ? ? power switching circuits 8 a, 600 v, s tealth? ii diode the FFP08S60SN is a stealth? ii diode with soft recovery characteristics. it is silicon nitride pas sivated ion-implanted epitaxial planar construction. this device is intended for use as freewheeling of boost diode in s witching power supplies and other power swithching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching c ircuits reducing power loss in the switc hing transistors. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 89 o c 8 a i fsm non-repetitive peak surge current 60hz single half-sine wave 60 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 3.6 o c/w device marking device package reel size tape width quantity f08s60sn FFP08S60SNtu to220-2l - - 50 1. cathode 2. anode 1. cathode 2. anode to-220- 2l may 2008 boos t diode in continuous mode power factor corrections ? improved dv/dt capability ? rohs compliant
FFP08S60SN 8 a, 600 v, stealth? ii diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 8 a i f = 8 a t c = 25 o c t c = 125 o c - - 2.7 2.1 3.4 - v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 500 a t rr i f = 1 a, di/dt = 100 a/s, v r = 30 v t c = 25 o c-1 3-n s t rr i rr s factor q rr i f = 8 a, di/dt = 200 a/s, v r = 390 v t c = 25 o c - - - - 15 2.5 0.4 19 25 - - - ns a nc t rr i rr s factor q rr i f = 8 a, di/dt = 200 a/s, v r = 390 v t c = 125 o c - - - - 32 3.8 0.7 62 - - - - ns a nc w avl avalan che energy ( l = 40 mh) 10 - - mj test circuit and waveforms notes: 1: pulse: test pu lse width = 300 s, duty cycle = 2% ?2008 fairchild semiconductor corporation FFP08S60SN rev. a
FFP08S60SN 8 a, 600 v, stealth? ii diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage figure 3.typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 100 200 300 400 500 600 0.001 0.01 0.1 1 10 40 t c = 75 o c t c = 25 o c t c = 125 o c reverse current , i r [ a ] reverse voltage, v r [v] 10 012345 0.1 1 10 20 t c = 125 o c t c = 75 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0.1 1 10 100 0 10 20 30 40 50 typical capacitance at 0v = 43 pf capacitances , cj [pf] reverse voltage, v r [v] 100 200 300 400 500 600 10 20 30 40 i f = 8a t c = 75 o c t c = 25 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 100 200 300 400 500 600 0 2 4 6 8 10 i f = 8a t c = 125 o c t c = 25 o c t c = 75 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 5 10 15 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2008 fairchild semiconductor corporation FFP08S60SN rev. a
FFP08S60SN 8 a, 600 v, stealth? ii diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters to220 2l ?2008 fairchild semiconductor corporation FFP08S60SN rev. a
FFP08S60SN 8 a, 600 v, stealth? ii diode www.fairchildsemi.com 5 ?2008 fairchild semiconductor corporation FFP08S60SN rev. a
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